, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. mac97 series preferred device sensitive gate triacs silicon bidirectional thyristors designed for use in solid state relays, mpu interface, ttl logic and any other light industrial or consumer application. supplied in an inexpensive to-92 package which is readly adaptable for use in automatic insertion equipment. ? one-piece,injection-molded package ? blocking village to 600 \6lts ? sensitive gate triggering in four trigger modes (quadrants) for all possible combinations oftriggcr sources, and especially for circuits that source date drives ? all diffused and glassivated junctions for maximum uniformity of parameters and reliability ? device marking: device type, e.g., mac97a4, date code maximum ratings (tj = 25"c unless otherwise noted) rating peak repetitive off-state voltage (tj = -40to+100"c) (motel) sire wave 50 to 60 hz, gate open mac97a4 MAC97A6 mac97-8, mac97a8 on-state rms current full cycle sine wave 50 to 60 hz (tc = +50"c) peak non-repetitive surge current one full cycle, sine wave 60 hz (tc=110"c) circuit fusing considerations (t = 8.3 ms) peak gate voltage (t -= 2.0 s, tc = +80"c) peak gate power (t -= 2.0 s, tc = +80"c) average gate power (tc = 80"c, t * 8.3 ms) peak gate current (t* 2.0)js. tc = +80"c) operating junction temperature range storage temperature range symbol vdrm vrrm h~(rms) 'tsm i2t vgm pgm pg(av) igm tj tstg value 200 400 600 0.6 8.0 0.26 5.0 5.0 0.1 1.0 -4010 + 100 -40 to* 150 unit volts amp amps a^s volts watts watt amp "c "c 1 ? vdrm and vrrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 triacs 0.8 ampere rms 200 thru 600 volts mt2 o mt1 g to-92 pin assignment 1 2 3 main terminal 1 gate main terminal 2 ordering information see detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. preferred devices are recommended choices for future use and best overal! value nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mac97 series thermal characteristics characteristic thermal resistance, junction to case thermal resistance, junction to ambient maximum lead temperature for soldering purposes for 10 seconds symbol rojc rsja tl max 75 200 260 unit 'c/w -cm c electrical characteristics = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol | min iyp max unit off characteristics peak repetitive blocking current (vd = rated vdrm. vrrm; gate open) tj = 25 c j !drm, !rrm - - 10 100 ma ma on characteristics peak on-state voltage otm = .85 a peak; pulse width * 2.0 ms, duty cycle ^ 2.0%) gate trigger current (continuous dc) (vd - mt2 mt2 mt2 mt2 mt2 mt2 mt2 mt2 12 vdc, rl = 100 ohms) + ) g(+) mac97-8 device + ).g(-) -) g(-) -).g(+) +), g(+) mac97a4,a6,a8 devices + ) g(-) -j.g(-) gate trigger voltage (continuous dc) (vd = 12 vdc, rl = 100 ohms) mt2i mt2 mt2 mt2 +), g(+) all types + ),g(-) all types -),g(-)aiitypes -),g( + )aii types gate non-trigger voltage (vd = 12 v rl = 100 ohms, tj = 110 "c) all four quadrants holding current (vd = 12 vdc, initiating current = 200 ma, gate open) turn-on time (vd = rated vdrm, itm = 1.0 a pk, !g = 25ma) vtm igt vgt vgd ih tgt ? ? ? ? ? ? ? ? - 0.1 _ - ? ? ? ? ? ? .66 .77 .84 .88 - 1.5 2.0 1.9 10 10 10 10 5.0 5.0 5.0 7 0 2.0 2.0 2.0 2.5 _ 10 _ volts ma volts volts ma ms dynamic characteristics critical rate-of-rise of commutation voltage (vd = rated vdrm. itm = -84 a, commutating di/dt = .3 a/ms, gate unenergized, tc = 50 c) critical rate of off-state voltage (vd = rated vdrm. tc = 110 c, gate open. exponential waveform dv/dt(c) dv/dt - - 5.0 25 - - v/us v/us
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